PTFA043002E V1

PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS ® push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The thermally-enhanced package provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA043002E Package H-30275-4 Features Two-tone Drive-up at 800 MHz (in broadband circuit) VDD = 32 V, IDQ = 1.55 A, ƒ 1 = 799.5 MHz, ƒ 2 = 800.5 MHz Efficiency -10 3rd Order -20 IM3, 5, 7 (dBc) 45 35 -30 30 -40 25 -50 7th -60 5th 20 15 -70 10 -80 5 -90 0 50 100 150 200 250 300 Thermally-enhanced package • Broadband internal matching • Typical 8VSB performance - Average output power = 100 W - Gain = 16 dB - Adjacent < –33 dBc • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability • Low HCI drift • Pb-free and RoHS compliant • Capable of handling 5:1 VSWR at 32 V, 300 W (CW) output power 40 Drain Efficiency (%) 0 • 0 350 Output Power (W PEP) RF Characteristics ATSC 8VSB Characteristics (broadband fixture, push-pull configuration) (VDD = 32 V, POUT = 100 W AVG, IDQ = 1.55 A, ƒ = 800 MHz) Characteristic Symbol Min Typ Max Unit Common Source Power Gain Gps — 16 — dB Drain Efficiency ηD — 28 — % FIrst Adjacent IMD — –33 — dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 03.1, 2009-02-20 PTFA043002E RF Characteristics (cont.) Two-tone Measurements (tested in narrowband test fixture) VDD = 32 V, IDQ = 1.55 A, POUT = 300 WPEP, ƒ = 860 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 16 17.5 — dB Drain Efficiency ηD 38 41 — % Intermodulation Distortion IMD — –29 –28 dBc DC Characteristics (one side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA/side V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA RDS(on) — 0.08 — W On-State Resistance VGS = 10 V, VDS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 0.75 A/side VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 761 W 4.35 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 300 W CW) RθJC 0.23 °C/W Ordering Information Type Package Outline Package Description Marking PTFA043002E H-30275-4 Thermally-enhanced, flange mount PTFA043002E *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 03.1, 2009-02-20 PTFA043002E Typical Performance (data taken in a broadband test fixture) 8VSB Performance vs. Frequency @ 100 W Average Power Two-tone IMD Performance VDD = 32 V, IDQ = 1.55 A, IMD = –28 dBc 300 50 Output Power (PEP) 200 40 Drain Efficiency 100 0 400 500 600 700 800 30 30 -30 Efficiency 26 -32 Adjacent -36 18 -38 14 -40 400 20 900 22 -34 500 250 18.0 50 17.5 45 Efficiency 200 40 150 35 100 30 50 25 700 800 Small Signal Gain (dB) Output Power 55 Drain Efficiency (%) Output Power, 25% Sync Compression (W, Pk, Sync.) 350 600 17.0 16.5 16.0 15.5 15.0 14.5 14.0 400 20 900 500 600 700 800 900 Frequency (MHz) Frequency (MHz) Data Sheet 10 900 VDD = 32 V, IDQ = 1.55 A VDD = 32 V, IDQ = 1.55 A 500 800 Gain vs. Frequency Analog NTSC Performance 0 400 700 Frequency (MHz) Frequency (MHz) 300 600 Drain Efficiency (%) 60 Adjacent (dBc) 400 Drain Efficiency (%) Output Power, PEP (W) VDD = 32 V, IDQ = 1.55 A, IMD = –28 dBc 3 of 10 Rev. 03.1, 2009-02-20 PTFA043002E Typical Performance (cont.) Two-tone Drive-up at 800 MHz DVB Adjacent Channel Power (in narrowband circuit) VDD = 32 V, IDQ = 1.55 A, ƒ1 = 799.5 MHz, ƒ2 = 800.5 MHz 0 25 Efficiency +4.2 MHz -60 15 -65 10 -70 5 IM3, 5, 7 (dBc) 20 –4.2 MHz 40 Drain Efficiency -10 -55 Drain Efficiency (%) ACP (±4.2 MHz) (dBc) -50 -20 35 3rd Order -30 5th Gain -40 -50 -60 7th 20 10 5 -80 0 Frequency (MHz) 25 15 -70 -75 0 450 500 550 600 650 700 750 800 850 900 30 50 100 150 200 250 300 Gain (dB), Efficiency (%) VDD = 32 V, IDQ = 1.55 A, 63 W DVB s ignal 0 350 Output Power, PEP (W) Bias Voltage vs. Temperature Normalized Bias Voltage (V) Voltage normalized to typical gate voltage, series show current 1.03 0.29 A 1.02 0.88 A 1.01 1.47 A 2.20 A 1.00 4.41 A 0.99 6.61 A 0.98 8.81 A 0.97 11.02 A 0.96 0.95 -20 0 20 40 60 80 100 Case Temperature (°C) Data Sheet 4 of 10 Rev. 03.1, 2009-02-20 PTFA043002E Broadband Circuit Impedance Data VDD = 28 V, IDQ = 2.0A, POUT = 30 W AVG Two-carrier WCDMA Z Source D Z Load S G G 450 3.00 –4.61 1.78 –3.26 475 3.02 –3.71 1.85 –2.63 500 3.18 –2.96 1.99 –2.09 525 3.43 –2.36 2.18 –1.64 550 3.75 –1.90 2.41 –1.28 575 4.10 –1.61 2.64 –1.03 600 4.42 –1.47 2.85 –0.87 625 4.66 –1.44 3.01 –0.77 650 4.79 –1.47 3.10 –0.70 675 4.84 –1.50 3.15 –0.63 700 4.84 –1.50 3.17 –0.53 725 4.82 –1.46 3.20 –0.42 750 4.82 –1.42 3.24 –0.31 775 4.83 –1.41 3.30 –0.22 800 4.80 –1.46 3.33 –0.18 825 4.69 –1.54 3.30 –0.16 850 4.43 –1.61 3.17 –0.13 875 4.04 –1.54 2.95 –0.01 900 3.57 –1.27 2.67 0.27 Data Sheet 5 of 10 Z Load 900 MHz 900 MHz 0.2 jX 0.1 R 0 .0 jX Z Source 450 MHz 0. 1 450 MHz V R - WA < -- MHz Z0 = 50 Ω O W A RD L OAD G THS T EL E N Z Load Ω 0 .1 Z Source Ω Frequency NER A D 0 .2 3 0. Rev. 03.1, 2009-02-20 PTFA043002E Reference Circuit C33 0.001µF R10 1.3K V R11 1.2K V QQ1 LM7805 VDD Q1 BCP56 V BIAS C34 0.001µF C35 0.001µF R12 22V VBIAS R13 2KV R14 100 V V DD R7 3.3KV C10 0.1µF R8 10V L1 C11 10µF 35V R9 5.1KV C12 75pF l9 l10 l11 l12 C18 1µF C20 10µF 50V C19 1µF l14 l13 C9 75pF TB2 C17 75pF C21 10µF 50V C17 75pF l16 DUT l18 TB 4 l20 l22 l24 l8 C2 15pF Sl1 C4 2.4pF l2 C14 4.8pF l4 l5 l6 l1 R3 22V l17 l19 TB 3 l21 C6 0.1µF C7 10µF 35V l23 VDD R5 10 V R4 3.3KV Sl2 C31 6.2pF l25 l15 l7 R1 100 V R2 2KV C30 6.8pF C15 2.4pF C16 75pF l3 VBIAS C1 2.7pF C13 8.2pF C5 8.2pF C3 75pF TB1 RF_IN C22 0.01µF l26 R6 5.1KV C24 75pF C8 75pF C25 1µF C26 1µF C27 10µF 50V RF_OUT C32 2.7pF L2 C28 10µF 50V C29 0.01µF a043002e_bd-02_070212 Reference circuit schematic for 470 to 860 MHz—rated for 300 W (PEP) only Circuit Assembly Information DUT Circuit board Microstrip TB1, TB2, TB3, TB4 Sl1, Sl2 l1, l26 l2, l8, l24, l25 l3, l9 l4, l10 l5, l11 l6, l12 l7, l13 l14, l15 l16, l17 l18, l19 l20, l21 l22, l23 PTFA043002E 0.25 mm [.010”] over .635 mm [.025”] thick, εr = 10.2 copper: 10 mils top 25 mils bottom LDMOS transistor Rogers 3010, multilayer Electrical Characteristics at 860 MHz1 Dimensions: L x W (mm) Broadside coupled striplines 0.017 0.250 0.004 0.049 0.038 0.067 0.055 0.216 0.307 0.045 0.112 0.024 0.022 λ, 15.6 Ω λ, 39.0 Ω λ, 26.0 Ω λ, 6.1 Ω λ, 6.1 Ω λ, 4.2 Ω λ, 3.8 Ω λ, 41.0 Ω λ, 41.0 Ω λ, 3.8 Ω λ, 3.8 Ω λ, 3.8 Ω λ, 4.7 Ω Dimensions: L x W (in.) 14.63 x 1.70 0.576 x 0.067 33.02 x 1.32 0.51 x 2.54 5.59 x 15.24 4.45 x 15.24 7.62 x 22.86 6.25 x 25.40 28.45 x 1.22 40.39 x 1.22 5.08 x 25.40 12.70 x 25.40 2.74 x 25.40 2.54 x 20.32 2.54 x 20.32 0.075 x 0.067 1.300 x 0.052 0.020 x 0.100 0.220 x 0.600 0.175 x 0.600 0.300 x 0.900 0.246 x 1.000 1.120 x 0.048 1.590 x 0.048 0.200 x 1.000 0.500 x 1.000 0.108 x 1.000 0.100 x 0.800 1Electrical characteristics are rounded. Data Sheet 6 of 10 Rev. 03.1, 2009-02-20 PTFA043002E Reference Circuit (cont.) C11 C10 C33 C20 C18 R9 R8 R7 VDD V DD C12 C19 C21 Q1 QQ1 L1 C23 VDD C22 R13 R12 C34 R11 C35 R10 R14 C1 RF_IN C9 C2 C4 C5 C3 C13 C14 C15 C17 C31 C32 C16 RF_OUT C30 R2 R1 VDD C28 R3 L2 C29 C27 R5 R4 C7 C25 C24 C6 R6 C8 C26 a043002e_cd-02_070212 C10 C12 C11 R9 R8 R7 VDD C33 QQ1 R13 R12 Q1 C34 R11 C35 R10 R14 a043002e_cd-dtl_0702212 Reference circuit assembly diagram* (not to scale)—rated for 300 W (PEP) only *Gerber Files for this circuit available on request. Data Sheet 7 of 10 Rev. 03.1, 2009-02-20 PTFA043002E Reference Circuit (cont.) Component Description Suggested Manufacturer P/N or Comment C1, C32 C2 C3, C8, C9, C12, C16, C17, C18, C24 C4, C15 C5, C13 C6, C10 C7, C11 C14 C19, C20, C25, C26 C21, C22, C27, C28 C23, C29 C30 C31 C33, C34, C35 L1, L2 Q1 QQ1 R1, R14 R2, R13 R3, R12 R4, R7 R5, R8 R6, R9 R10 R11 Ceramic capacitor, 2.7 pF Capacitor, 15 pF Ceramic capacitor, 75 pF ATC ATC ATC 100B 2R7 100B 150 100B 750 Ceramic capacitor, 2.4 pF Ceramic capacitor, 8.2 pF Capacitor, 0.1 µF Tantalum capacitor, 10 µF, 35 V Ceramic capacitor, 4.8 pF Capacitor, 1 µF Tantalum capacitor, 10 µF, 50 V Ceramic capacitor, 0.01 µF Ceramic capacitor, 6.8 pF Ceramic capacitor, 6.2 pF Capacitor, 0.001 µF Ferrite, 8.9 mm Transistor Voltage regulator Chip Resistor 100 ohms Potentiometer 2 k-ohms Chip Resistor 22 ohms Chip Resistor 3.3 k-ohms Chip Resistor 10 ohms Chip Resistor 5.1 k-ohms Chip Resistor 1.0 k-ohms Chip Resistor 1.1 k-ohms ATC ATC Digi-Key Digi-Key ATC ATC Garrett Electronics ATC ATC ATC Digi-Key Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key 100B 2R4 100B 8R2 PCC104BCT-ND PCS6106TR-ND 100B 4R8 920C105 TPS106K050R0400 200B 103 100B 6R8 100B 6R2 PCC1772CT-ND BDS 4.6/3/8.9-4S2 BCP56 LM7805 P100ECT-ND 3224W-202ETR-ND P22KECT-ND P3.3KECT-ND P10ECT-ND P5.1KECT-ND P1KGCT-ND P1.1KGCT-ND See next page for package information Data Sheet 8 of 10 Rev. 03.1, 2009-02-20 PTFA043002E Package Outline Specifications Package H-30275-4 2X 45°±5° X 1.19 [.047] C L C L 13.72 [.540] 2X R 1.59 [.063] D D 16.61±0.51 [.654±.020] 9.40 +0.10 –0.15 [.370 +.004 ] –.006 2X 3.18 [.125] C L +0.10 LID 9.14 –0.15 [.360 +.004 ] –.006 S 4X 3.23±0.25 [.127±.010] Flange 10.16 [.400] G G 4X 11.68 [.460] 35.56 [1.400] 31.24±0.28 [1.230±.011] 1.63 [.064] 4.55±0.38 [.179±.015] 0.038 [.0015] -AH-30275-4 2.18 [.086] SPH 41.15 [1.620] Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.13 +0.051/–0.025 [.005 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 11.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 9 of 10 Rev. 03.1, 2009-02-20 PTFA043002E Confidential, Limited Internal Distribution Revision History: 2009-02-20 2005-11-18, Data Sheet Previous Version: Data Sheet Page Subjects (major changes since last revision) 6 1, 2, 9 Revise circuit board information. Update package designation. 8 Fixed typing error We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-02-20 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 03.1, 2009-02-20